Transition metal dichalcogenides (TMDs) provide a versatile platform for exploring quantum phenomena, enabled by their layered van der Waals structures and the coexistence of competing electronic states such as superconductivity and charge density waves. However, synthesizing high-quality crystals remains challenging: chemical vapor transport (CVT) often produces inconsistent morphologies, while chemical vapor deposition (CVD) can introduce substrate-induced strain.

In this work, we present selected vapor growth (SVG) as a scalable alternative for producing large, exfoliable single crystals of TaS_2, TaSe₂ and NbSe₂. By applying a controlled temperature gradient in a muffle furnace and utilizing iodine-assisted transport, we obtained crystals exceeding 1 cm in size with flat, well-defined surfaces. SVG enables precise control over growth conditions and crystal morphology, making it a promising route for fabricating high-quality TMDs for both fundamental research and device integration.